TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application 1SS336 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.
84V (typ.
) z Fast reverse recovery time : trr = 7ns (typ.
) z Small total capacitance : CT = 7pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 600 * 200 * 6* 150 mA mA A mW Junction temperature Storage temperature Tj 150 °C JEDEC Tstg −55~150 °C JEITA TD-236MOD SC-59 Note: Using continuously under heavy lo...

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