TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High-Speed Switching Applications 1SS337 Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.
88 V (typ.
) z Fast reverse recovery time: trr = 6 ns (typ.
) z Small total capacitance: CT = 1.
6 pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation IFM IO IFSM P 600 * 200 * 6* 150 mA mA A mW Junction temperature Storage temperature Tj 150 °C JEDEC Tstg −55 to 150 °C JEITA TO-236MOD SC-59 Note: Using continuously under he...

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