TOSHIBA Diode Silicon Epitaxial
Schottky Planar Type
1SS344
Ultra High Speed Switching Application
1SS344
Unit: mm
z Low forward voltage
: VF (3) = 0.
50V (typ.
)
z Fast reverse recovery time : trr = 20ns (typ.
)
z High average forward current : IO = 0.
5A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
25 V
Reverse voltage
VR 20 V
Maximum (peak) forward current
IFM
1500
mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM
P
500 mA 5A
200 mW
Junction temperature
Tj 125 °C
Storage temperature Operating Temperature
Tstg −55~125 °C JEDEC Topr −40~100 °C EIAJ
TD-236MOD SC-59
Note: Using c...