TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application 1SS352 Unit: mm z Small package z Low forward voltage : VF (3) = 0.
98V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 0.
5pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 200 100 1 200 (*) mA mA A mW Junction temperature Storage temperature Tj 125 °C JEDEC Tstg −55~125 °C JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the a...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)