TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application 1SS360 Unit: mm z Small package z Low forward voltage : VF = 0.
92V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 2.
2pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 300 * 100 * 2* 100 mA mA A mW Junction temperature Tj 125 °C JEDEC ― Storage temperature Tstg −55∼125 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the ap...

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