Part Number
|
1SS361 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)...
|
Datasheet
|
1SS361
|
Overview
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
Low forward voltage
: VF (3) = 0.
90 V (typ.
)
Fast reverse recovery time : trr = 1.
6 ns (typ.
)
Small total capacitance : CT = 0.
9 pF (typ.
)
Note1: For detail information, please contact our sales.
1SS361
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2*
A
Power dissipation
PD (Note 2, 4)
120
mW
PD (Note 3)
100
Junc...
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