Part Number
|
1SS362 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362
Ultra High Speed Switching Application
z Small package
z Low forwa...
|
Datasheet
|
1SS362
|
Overview
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362
Ultra High Speed Switching Application
z Small package
z Low forward voltage
: VF(3) = 0.
97 V (typ.
)
z Fast reverse recovery time : trr = 1.
6 ns (typ.
)
z Small total capacitance : CT = 0.
5 pF (typ.
)
1SS362
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
240 *
mA
Average forward current
IO 80 * mA
Surge current (10ms)
IFSM
1* A
Power dissipation
P 100 mW
Junction temperature
Tj 125 °C
SSM
Storage temperature
Tstg
−55 to 125
°C
JEDEC
―
Note: Using continuously under heavy loads...
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