|
Part Number
|
1SS372 |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
Silicon Epitaxial Schottky Barrie Diode |
|
Published
|
Mar 23, 2005 |
|
Datasheet
|
1SS372
|
Features
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS372
High Speed Switching Application
1SS372
Unit: mm
z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
...
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