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1SS374

Part Number 1SS374
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrie Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application 1SS374 Unit: mm z Small ...
Datasheet 1SS374




Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application 1SS374 Unit: mm z Small package z Low forward voltage: VF (2) = 0.
23V (typ.
) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 * 1* 150 mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.
g.
the application of high t...






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