TOSHIBA Diode Silicon Epitaxial
Schottky Barrier Type
1SS374
High Speed Switching Application
1SS374
Unit: mm
z Small package z Low forward voltage: VF (2) = 0.
23V (typ.
) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM
P
100 * 1* 150
mA A mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.
g.
the application of high t...