TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm  Small package : SC-70  Low forward voltage : VF = 1.
0V (typ.
)  High voltage : VR = 400V (min)  Fast reverse recovery time : trr = 0.
5μs (typ.
)  Small total capacitance : CT = 2.
5pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2A Power dissipation Junction temperature P 100 mW JEDEC Tj 125 °C JEITA ― SC-70 Storage temperature range Tstg −55 t...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)