DatasheetsPDF.com

4N35

Part Number	4N35
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 11, 2016
Detailed Description	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fas...
Datasheet	4N35 PDF File

Overview

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Re...

Similar Datasheet

4N03L02 Power-Transistor - Infineon
4N041R1 Power-Transistor - Infineon
4N04R7 Power-Transistor - Infineon
4N04R8 Power-Transistor - Infineon
4N10 N-Channel MOSFET Transistor - Inchange Semiconductor
4N100 N-CHANNEL MOSFET - UTC
4N100-FC N-CHANNEL POWER MOSFET - UTC
4N100-FCQ N-CHANNEL MOSFET - UTC
4N120 N-CHANNEL MOSFET - UTC
4N135-P N-CHANNEL POWER MOSFET - UTC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)