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6N60AF

nELL
Part Number 6N60AF
Manufacturer nELL
Description N-Channel Power MOSFET
Published Sep 1, 2016
Detailed Description SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell...
Datasheet PDF File 6N60AF PDF File

6N60AF
6N60AF

Overview
SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.
threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES RDS(ON) = 1.
5Ω@VGS = 10V Ultra low gate charge(25nC max.
) Low reverse transfer capacitance (CRSS = 10pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (6N60F) D D G S TO-252 (D-PAK) (6N60G) GDS TO-220AB (6N60A) GDS TO-220F (6N60AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
6 600 1.
5 @ VGS = 10V 25 D (Drain) G (Gate) S (Source) www.
nellsemi.
com Page 1 of 10 SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS ID IDM IAR EAR EAS dv/dt Gate to Source voltage Continous Drain Current Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3) TC=25°C TC=100°C IAR=6A, RGS=50Ω, VGS=10V IAS=6A, L = 14mH TO-251/ TO-252 PD Total power dissipation TC=25°C TO-220AB TO-220F TJ TSTG Operation junction temperature Storage temperature TL Maximum soldering temperature, for 10 seconds 1.
6mm from case Mounting torque, #6-32 or M3 screw Note: 1.
Repetitive rating: pulse width limited by junction temperature.
2.
IAS = 6A, VDD = 50V, L = 14mH, RGS = 25Ω, starting TJ=25°C.
3.
ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
VALUE UNIT 600 600 V ...


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