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6N60-C

Unisonic Technologies
Part Number 6N60-C
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Jan 29, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 6N60-C 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage p...
Datasheet PDF File 6N60-C PDF File

6N60-C
6N60-C

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 6N60-C 6.
2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
 FEATURES * RDS(ON) < 1.
5Ω @ VGS=10V, ID=3.
1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TMS-T 6N60G-TMS-T TO-251S 6N60L-TMS2-T 6N60G-TMS2-T TO-251S2 6N60L-TMS4-T 6N60G-TMS4-T TO-251S4 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-A50.
C 6N60-C  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R502-A50.
C 6N60-C Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 ±30 V V Avalanche Current (Note 2) Continuous Drain Current IAR 6.
2 A ID 6.
2 A Pulsed Drain Current (Note 2) IDM 24.
8 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 310 mJ 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 ns TO-220/TO-220F1 40 W Power Dissipation TO-251S/TO-251S2/ TO-251S4 PD 55 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not ...


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