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6N60-P

Unisonic Technologies
Part Number 6N60-P
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Jan 29, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-P is a ...
Datasheet PDF File 6N60-P PDF File

6N60-P
6N60-P

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 6N60-P Power MOSFET 6A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
 FEATURES * RDS(ON) < 1.
75Ω @ VGS = 10V, ID = 3A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 11 TO-220 TO-220F 11 TO-220F1 TO-220F2 1 TO-263 1 TO-251 1 TO-252  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N60L-TA3-T 6N60G-TA3-T TO-220 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TF2-T 6N60G-TF2-T TO-220F2 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TM3-T 6N60G-TM3-T TO-251 6N60L-TN3-R 6N60G-TN3-R TO-252 6N60L-TQ2-T 6N60G-TQ2-T TO-263 6N60L-TQ2-R 6N60G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S GD S GD S GD S GD S GD S Packing Tube Tube Tube Tube Tube Tape Reel Tube Tape Reel www.
unisonic.
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tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-969.
C 6N60-P  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R502-969.
C 6N60-P Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 6 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 6 A IDM 24 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 260 mJ 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.
0 ns TO-220/TO-263 125 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 40 W 42 W TO-251/TO-252 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C ...


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