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STN4416

Stanson Technology
Part Number STN4416
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field ...
Datasheet PDF File STN4416 PDF File

STN4416
STN4416

Overview
STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8 FEATURE � 20V/10A, RDS(ON) = 11mΩ (Typ.
) @VGS = 4.
5V � 20V/5.
6A, RDS(ON) = 23mΩ @VGS = 2.
5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 STN4416 YA Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STN4416 2009.
V1 STN4416 N Channel Enhancement Mode MOSFET 10A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 20 Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM ±12 1.
0 7.
2 35 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ 2.
3 2.
5 1.
6 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STN4416 2009.
V1 STN4416 N Channel Enhancement Mode MOSFET 10A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-source OnResistance Forward Transconductance Diode Forward Voltage ID(on) RDS(o...


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