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STN442D

Stanson
Part Number STN442D
Manufacturer Stanson
Description N Channel Enhancement Mode MOSFET
Published Jun 28, 2015
Detailed Description STN442D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS(o...
Datasheet PDF File STN442D PDF File

STN442D
STN442D

Overview
STN442D N Channel Enhancement Mode MOSFET 37.
0A DESCRIPTION STN442D is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE � 60V/20.
0A, RDS(ON) = 24mΩ (Typ.
) @VGS = 10V � 60V/20.
0A, RDS(ON) = 31mΩ @VGS = 4.
5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STN442D 2009.
V1 STN442D N Channel Enhancement Mode MOSFET 37.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 60 ±20 37.
0 26.
0 60 32 60 30 175 -55/175 62 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STN442D 2009.
V1 STN442D N Channel Enhancement Mode MOSFET 37.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current V(BR)DSS VGS=0V,ID=250mA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) VDS=0V,VGS=±20V VDS=48V,VGS=0V VDS=48V,VGS=0V TJ=55℃ VDS≧5V,VGS=10V 60 1 60 V 3V 100 nA 1 uA 5 A Drain-source OnResistance RDS(on) VGS=10V,ID=20A VGS=4.
5V,ID=20A 24 31 28 37 mΩ Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gat...


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