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STN4438

Stanson
Part Number STN4438
Manufacturer Stanson
Description N-Channel Enhancement Mode MOSFET
Published Dec 4, 2015
Detailed Description STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File STN4438 PDF File

STN4438
STN4438

Overview
STN4438 N Channel Enhancement Mode MOSFET 8.
2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8 FEATURE l 60V/8.
2A, RDS(ON) = 25mΩ (Typ.
) @VGS = 10V l 60V/7.
6A, RDS(ON) = 30mΩ @VGS = 4.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com PDF created with pdfFactory Pro trial version www.
pdffactory.
com Copyright © 2008, Stanson Corp.
STN4438 2009.
V1 STN4438 N Channel Enhancement Mode MOSFET 8.
2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 60 ±20 8.
2 6.
6 40 3.
0 3.
1 2.
0 150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com PDF created with pdfFactory Pro trial version www.
pdffactory.
com Copyright © 2008, Stanson Corp.
STN4438 2009.
V1 STN4438 N Channel Enhancement Mode MOSFET 8.
2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current V(BR)DSS...


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