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STN4426

Stanson Technology
Part Number STN4426
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN4426 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field...
Datasheet PDF File STN4426 PDF File

STN4426
STN4426

Overview
STN4426 N Channel Enhancement Mode MOSFET 8.
0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8 FEATURE � 20V/8.
0A, RDS(ON) = 28mΩ (Typ.
) @VGS = 4.
5V � 20V/7.
0A, RDS(ON) = 36mΩ @VGS = 2.
5V � 20V/3.
0A, RDS(ON) = 42mΩ @VGS = 1.
8V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 STN4426 SYA S: Subcontractor Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STN4426 2009.
V1 STN4426 N Channel Enhancement Mode MOSFET 8.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 20 ±12 7.
4 6.
0 35 2.
3 2.
5 1.
6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STN4426 2009.
V1 STN4426 N Channel Enhancement Mode MOSFET 8.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-source O...


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