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P2003BDG

NIKO-SEM
Part Number P2003BDG
Manufacturer NIKO-SEM
Description N-Channel MOSFET
Published May 14, 2020
Detailed Description NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-F...
Datasheet PDF File P2003BDG PDF File

P2003BDG
P2003BDG

Overview
NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ ID 32A D G S 1.
GATE 2.
DRAIN 3.
SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.
1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg LIMITS 25 ±20 32 20 110 23 27 35 14 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA Case-to-Heatsink RCS 1Pulse width limited by maximum junction temperature.
2Duty cycle  1％ TYPICAL 0.
7 MAXIMUM 3.
6 75 UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 25 1.
0 1.
8 2.
5 V VDS = 0V, VGS = ±20V ±250 nA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 A 250 VDS = 10V, VGS = 10V 110 A REV 1.
0 Sep-09-2009 1 NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.
5V, ID = 10A VGS = 10V, ID = 15A VDS = 5V, ID = 15A 29 41 mΩ 14 20 19 S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Ciss Coss Crss Rg VGS = 0V, VDS = 15V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz 492 221 187 1.
5 pF Ω Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-...


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