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P2003BDG

UNIKC
Part Number P2003BDG
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 6, 2017
Detailed Description P2003BDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 28A ...
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P2003BDG
P2003BDG


Overview
P2003BDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 28A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 28 18 90 Avalanche Current IAS 23 Avalanche Energy L=0.
1mH EAS 26 Power Dissipation TC= 25 °C TC= 100°C PD 27 10 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC TYPICAL MAXIMUM UNITS 4.
6 °C / W REV 1.
0 1 2014/5/12 P2003BDG N-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown VGo...


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