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1SS367

Part Number	1SS367
Manufacturer	SEMTECH
Description	SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
Published	Feb 13, 2018
Detailed Description	1SS367 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features PIN • Low forwar...
Datasheet	1SS367 PDF File

Overview

1SS367 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features PIN • Low forward voltage: VF = 0.
23V (typ.
) @IF = 5mA 1 2 1 DESCRIPTION Cathode Anode 2 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr Value 15 10 200 100 1 200 125 -55 to +125 -40 to +100 Unit V V mA mA A mW ? ? ? Characteristics at T j = 25 ? Parameter Fo...

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