DatasheetsPDF.com

1SS389

Part Number	1SS389
Manufacturer	GME
Description	Schottky Barrier Diode
Published	Feb 26, 2018
Detailed Description	Schottky Barrier Diode FEATURES  Low forward voltage.  Small package. Pb Lead-free Production specification 1SS389 ...
Datasheet	1SS389 PDF File

Overview

Schottky Barrier Diode FEATURES  Low forward voltage.
 Small package.
Pb Lead-free Production specification 1SS389 APPLICATIONS  High speed switching application.
ORDERING INFORMATION Type No.
Marking 1SS389 S4 SOD-523 Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage DC Reverse voltage Maximum(peak) forward current Continuous forward current Surge current VRM 15 VR 10 IFM 200 IF IFSM 100 1 V V mA mA A Total power dissipation Junction temperature Storage temperature Operating temperature range Ptot 150 mW Tj 125 ℃ Tstg -55 to +125 ℃ Topr -40 to +100 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃...

Similar Datasheet

1SS300 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS300 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS301 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS301 SUPER HIGH SPEED SWITCHING DIODE - XIN SEMICONDUCTOR
1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS302 Diode - Toshiba Semiconductor
1SS302 ULTRA HIGH SPEED SWITCHING APPLICATIONS - Guangdong Kexin Industrial
1SS302A Silicon Epitaxial Planar Switching Diodes - Toshiba
1SS306 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS307 Diode - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)