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BLF225

NXP
Part Number BLF225
Manufacturer NXP
Description VHF power MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLF225 VHF power MOS transistor Product specification September 1992 Philips Semico...
Datasheet PDF File BLF225 PDF File

BLF225
BLF225

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLF225 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch.
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION g MBB072 BLF225 PIN CONFIGURATION k, halfpage 1 4 d s 2 3 MSB057 Fig.
1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static charge during transport and handling.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions.
After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.
It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 12.
5 PL (W) 30 Gp (dB) > 8.
5 ηD (%) > 60 September 1992 2 Philips Semiconductors Product specification VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 °C CONDITIONS − − − − −65 − MIN.
BLF225 MAX.
40 20 9 68 150 200 UNIT V V A W °C °C THERMAL RESISTANCE SYMBOL Rth j-mb Rth ...


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