DatasheetsPDF.com

NDS9948

ON Semiconductor
Part Number NDS9948
Manufacturer ON Semiconductor
Description 60V Dual P-Channel MOSFET
Published Jan 24, 2023
Detailed Description NDS9948 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate vers...
Datasheet PDF File NDS9948 PDF File

NDS9948
NDS9948

Overview
NDS9948 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.
5V – 20V).
Applications • Power management • Load switch • Battery protection Features • –2.
3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ VGS = –4.
5 V • Low gate charge (9nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size NDS9948 NDS9948 13’’ ©2010 Semiconductor Components Industries, LLC.
September-2017, Rev.
2 5 4 6 Q1 3 7 2 Q2 8 1 Ratings –60 ±20 –2.
3 –10 2 1.
6 1.
0 0.
9 –55 to +175 Units V V A W °C 78 °C/W 135 °C/W 40 °C/W Tape width 12mm Quantity 2500 units Publication Order Number: NDS9948/D NDS9948 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD=–54 V IAR Drain-Source Avalanche Current 15 mJ –10 A Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR Gate–Body ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)