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NDS9955

Fairchild
Part Number NDS9955
Manufacturer Fairchild
Description Dual N-Channel MOSFET
Published May 12, 2005
Detailed Description May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement...
Datasheet PDF File NDS9955 PDF File

NDS9955
NDS9955

Overview
May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.
These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 3.
0 A, 50 V.
RDS(ON) = 0.
130 Ω @ VGS = 10 V, RDS(ON) = 0.
200 Ω @ VGS = 4.
5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 G2 7 8 4 3 2 1 S ND 55 99 S2 G1 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted NDS9955 50 ±20 (Note 1a) Units V V A 3 10 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.
6 1 0.
9 -55 to 150 °C TJ,TSTG RθJA RθJC Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1998 Fairchild Semiconductor Corporation NDS9955 Rev.
A Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) VGS = 0 V, I D = 250 µA ID = 250 µA, Referenced to 25 C VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS...


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