DatasheetsPDF.com

NDS9948

Fairchild
Part Number NDS9948
Manufacturer Fairchild
Description Dual P-Channel MOSFET
Published May 12, 2005
Detailed Description February 1996 NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhan...
Datasheet PDF File NDS9948 PDF File

NDS9948
NDS9948

Overview
February 1996 NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features -2.
3A, -60V.
RDS(ON) = 0.
25Ω @ VGS = -10V.
High density cell design for low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.
______________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDS9948 -60 ± 20 (Note 1a) Units V V A - Continuous TA = 25°C - Pulsed - Continuous TA = 25°C TA = 70°C ± 2.
3 ± 10 (Note 1a) ± 1.
8 2 W PD Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.
6 1 0.
9 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDS9948.
SAM Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Conditions VGS = 0 V, ID = -250 µA VDS = -40 V, VGS = 0 V TJ = 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Vo...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)