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HAT1044M

Renesas
Part Number HAT1044M
Manufacturer Renesas
Description Silicon P-Channel Power MOSFET
Published May 2, 2023
Detailed Description HAT1044M Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High densit...
Datasheet PDF File HAT1044M PDF File

HAT1044M
HAT1044M

Overview
HAT1044M Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting • 4.
5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6) 4 5 6 3 3 G 2 1 REJ03G1152-0600 (Previous: ADE-208-753D) Rev.
6.
00 Sep 07, 2005 1 256 D DDD S 4 4 3 1, 2, 5, 6 Source Gate Drain Rev.
6.
00 Sep 07, 2005 page 1 of 3 HAT1044M Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation VDSS VGSS ID Note 2 ID (pulse) Note 1 IDR Note 2 Pch (pulse) Note 2 Pch (continuous) Note 3 –30 ±20 –4.
5 –18 –4.
5 2.
0 1.
05 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the alumina ceramic board (50 × 50 × 0.
7 mm), PW ≤ 5 s, Ta = 25°C 3.
When using the alumina ceramic board (50 × 50 × 0.
7 mm), Ta = 25°C (Ta = 25°C) Unit V V A A A W W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4.
Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min Typ Max –30 — — — — ±0.
1 — — –1 –1.
0 — –2.
5 — 50 60 — 80 105 3 5.
5 — — 600 — — 220 — — 150 — — 13 — — 2 — — 3 — — 12 — — 85 — — 55 — — 55 — — –0.
95 — — 50 — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = –10 mA...


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