DatasheetsPDF.com

HAT1048R

Renesas Technology
Part Number HAT1048R
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features www.DataShee...
Datasheet PDF File HAT1048R PDF File

HAT1048R
HAT1048R


Overview
HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd.
Edition Jan.
2001 Features www.
DataSheet4U.
com • Capable of -4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance R DS(on) = 6.
0 mΩ typ (at VGS = -10V) Outline SOP-8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1048R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature www.
DataSheet4U.
com Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Note2 Note2 Note1 Ratings -30 ± 20 -16 -128 -16 2.
5 50 150 – 55 to + 150 Unit V V A A A W ° C/W °C °C θ ch-a Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10s HAT1048R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min -30 ± 20 — — -1.
0 — — (18) — — — — — — — — — — — — Typ — — — — — (6.
0) (9.
5) (30) (5700) (1250) (710) (105) (14) (20) (25) (45) (140) (55) (-0.
85) (50) Max — — ± 10 -1 -2.
5 (7.
0) (13.
5) — — — — — — — — — — — (-1.
10) — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions I D = -10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, V DS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, I D = -1 mA I D = -8 A, VGS = -10 V Note3 I D = -8 A, VGS = -4.
5V Note3 I D = -8 A, VDS = -10 V Note3 VDS = -10 V VGS = 0 f = 1 MHz VDD = -10 V VGS = -10 V I D = -16 A VGS = -10 V, ID = -8 A VDD ≅ 10 V RL = 1.
25 Ω Rg = 4.
7 Ω IF = -16 A, VGS = 0 Note3 IF = -16 A, VGS = 0 diF/ dt = 50 A/ µs Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance www.
DataSheet4U.
com I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)