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HAT1044M

Hitachi Semiconductor
Part Number HAT1044M
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT1044M Silicon P Channel Power MOS FET Power Switching ADE-208-753C(Z) Preliminary 4th. Edition December 1998 Feature...
Datasheet PDF File HAT1044M PDF File

HAT1044M
HAT1044M

Overview
HAT1044M Silicon P Channel Power MOS FET Power Switching ADE-208-753C(Z) Preliminary 4th.
Edition December 1998 Features • • • • Low on-resistance Low drive current High density mounting 4.
5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1044M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID* 2 1 Ratings -30 ±20 -4.
5 -18 -4.
5 2 3 Unit V V A A A W W °C °C I D(pulse) * I DR* 2 Pch (pulse)* 2.
0 1.
05 150 –55 to +150 Pch (continuous) * Channel temperature Storage temperature Tch Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
When using the alumina ceramic board (50 x 50 x 0.
7 mm), PW≤ 5s,Ta=25°C 3.
When using the alumina ceramic board (50 x 50 x 0.
7 mm) ,Ta=25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min -30 — — -1.
0 — — 3 — — — — — — — — — Typ — — — — 50 80 5.
5 600 220 150 12 85 55 55 -0.
95 50 Max — ±0.
1 -1 -2.
5 60 105 — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns IF = -4.
5A, VGS = 0 *1 IF = -4.
5A, VGS = 0 diF/ dt =-20A/µs Test Conditions I D = 10mA, VGS = 0 VGS = ±20V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10V, I D = -1mA I D = -3A, VGS = -10V *1 I D = -3A, VGS = -4.
5V *1 I D = -3A, VDS = -10V *1 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, ID = -3A RL = 3.
3Ω Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 1.
Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 HAT1044M Package Dimensions Un...


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