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HAT1043M

Hitachi Semiconductor
Part Number HAT1043M
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • • • • Lo...
Datasheet PDF File HAT1043M PDF File

HAT1043M
HAT1043M

Overview
HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • • • • Low on-resistance Low drive current High density mounting 2.
5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1043M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse) I DR Note 1 Note 2 Note 2 Note 3 Ratings –20 ±12 –4.
4 –17.
6 –4.
4 2.
0 1.
05 150 –55 to +150 Unit V V A A A W W °C °C Pch (pulse) Pch (continuous) Channel temperature Storage temperature Note: Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the alumina ceramic board (50 x 50 x 0.
7 mm), PW ≤ 5 s, Ta = 25°C 3.
When using the alumina ceramic board (50 x 50 x 0.
7 mm), Ta = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min –20 — — –0.
4 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 4 — — — — — — — — — — — — Typ — — — — 55 85 7 750 310 220 11 2 3.
5 15 100 85 100 –0.
95 50 Max — ±0.
1 –1 –1.
4 65 110 — — — — — — — — — — — –1.
23 — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = –4.
4 A, VGS = 0 I F = –4.
4 A, VGS = 0 diF/ dt = –20 A/ µs Test Conditions I D = –10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = –20 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –3 A, VGS = –4.
5 V Note 1 I D = –3 A, VGS = –2.
5 V Note 1 I D = –3 A, VDS = –10 V Note 1 VDS = –10 V VGS = 0 f = 1 MHz VDD = –10 V VGS = –4.
5 V I D = –4.
4 A VGS = –4.
5 V, ID = –3 A RL = 3.
3 Ω Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total Gate charge Gate to Source charge Gate to Drain charge Turn-on delay time Rise time Turn-off ...


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