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NDS9958

Fairchild
Part Number NDS9958
Manufacturer Fairchild
Description Dual N&P-Channel MOSFET
Published May 12, 2005
Detailed Description February 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and...
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NDS9958
NDS9958

Overview
February 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as notebook computer power management, Half bridge motor control, cellular phone, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features N-Channel 3.
5A, 20V, RDS(ON) = 0.
1Ω @ VGS = 10V.
P-Channel -3.
5A , -20V, RDS(ON) = 0.
1Ω @ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
_______________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage T A = 25°C unless otherwise noted N-Channel 20 ± 20 (Note 1a) (Note 1a) P-Channel -20 ± 20 ± 3.
5 ± 2.
8 ± 14 2 Units V V A Drain Current - Continuous TA = 25°C - Continuous TA = 70°C - Pulsed TA = 25°C ± 3.
5 ± 2.
8 ± 14 PD Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.
6 1 0.
9 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDS9958.
SAM Electrical Characteristics (TA= 25°C unless otherwise noted) Symbol BVDSS IDSS Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Cur...


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