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IRF2903ZL

International Rectifier
Part Number IRF2903ZL
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 14, 2007
Detailed Description PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Proces...
Datasheet PDF File IRF2903ZL PDF File

IRF2903ZL
IRF2903ZL

Overview
PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 30V RDS(on) = 2.
4mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A D D G D S G D S G D S TO-220AB IRF2903Z G D2Pak IRF2903ZS D TO-262 IRF2903ZL S Absolute Maximum Ratings Gate Drain Max.
260 180 75 1020 290 2.
0 ± 20 Source Units A Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current ™ PD @TC = 25°C Power Dissipation Linear Derating Factor VGS EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Avalanche Current W W/°C V mJ A mJ d Single Pulse Avalanche Energy Tested Value Ù h 290 820 See Fig.
12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g i °C 300 (1.
6mm from case ) 10 lbf in (1.
1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case y y k Parameter Typ.
Max.
0.
51 ––– 62 40 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ik i jk ––– 0.
50 ––– ––– Junction-to-Ambient (PCB Mount, steady state) www.
irf.
com 1 8/26/05 IRF2903Z/S/L Elect...


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