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IRF2903Z

INCHANGE
Part Number IRF2903Z
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 3, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2903Z，IIRF2903Z ·FEATURES ·Low drain-source on-resistance: R...
Datasheet PDF File IRF2903Z PDF File

IRF2903Z
IRF2903Z

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2903Z，IIRF2903Z ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.
4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 1020 PD Total Dissipation @TC=25℃ 290 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
51 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2903Z，IIRF2903Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250µA VGS(th) Gate Threshold Voltage VDS=VGS; ID=150μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=75A IGSS Gate-Source Leakage Current VGS=± 20V IDSS Drain-Source Leakage Current VDS=30V; VGS= 0V VSD Diode forward voltage IS =75A, VGS = 0 V MIN TYP MAX UNIT 30 V 2.
0 4.
0 V 2.
4 mΩ ±0.
2 μA 20 μA 1.
3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if...


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