DatasheetsPDF.com

IRF2903Z

International Rectifier
Part Number IRF2903Z
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 14, 2007
Detailed Description PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Proces...
Datasheet PDF File IRF2903Z PDF File

IRF2903Z
IRF2903Z

Overview
PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 30V RDS(on) = 2.
4mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A D D G D S G D S G D S TO-220AB IRF2903Z G D2Pak IRF2903ZS D TO-262 IRF2903ZL S Absolute Maximum Ratings Gate Drain Max.
260 180 75 1020 290 2.
0 ± 20 Source Units A Parameter ID @ TC = 25°C Continuous Drain C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)