DatasheetsPDF.com

SST2603

SeCoS
Part Number SST2603
Manufacturer SeCoS
Description P-Channel MOSFET
Published Jul 2, 2009
Detailed Description Elektronische Bauelemente SST2603 -5A, -20V,RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Produc...
Datasheet PDF File SST2603 PDF File

SST2603
SST2603

Overview
Elektronische Bauelemente SST2603 -5A, -20V,RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product Description The SST2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SST2603 is universally used for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
Features * Small package outline * Simple drive requirement Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range D G S Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg SOT-26 1.
90REF 0.
95REF 0.
95REF 0.
45 REF 2.
60 3.
00 1.
2 REF 0.
60 REF 1.
40 1.
80 0.
30 0.
55 2.
70 0.
10 Max 3.
10 o 0 0.
7 1.
45 10 o Dimensions in millimeters Date Code D DS 6 54 2603 12 DD 3 G Ratings -20 ±12 -5 -4 -20 2 0.
016 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max.
Symbol Rthj-a Ratings 62.
5 Unit oC /W http://www.
SeCoSGmbH.
com/ 15-Jun-2010 Rev.
C Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SST2603 -5A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage BVDS/ Tj VGS(th) Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=55oC) IGSS IDSS Static Drain-Source On-Resistance2 RDS(ON) Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductan...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)