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SST2605

SeCoS
Part Number SST2605
Manufacturer SeCoS
Description P-Channel MOSFET
Published Jul 2, 2009
Detailed Description www.DataSheet4U.com SST2605 -4.0A, -30V,RDS(ON) 80m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos....
Datasheet PDF File SST2605 PDF File

SST2605
SST2605

Overview
www.
DataSheet4U.
com SST2605 -4.
0A, -30V,RDS(ON) 80m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product SOT-26 Description 0.
37Ref.
0.
20 0.
60 Ref.
2.
60 3.
00 The SST2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2605 is universally used for all commercial-industrial applications.
0.
25 1.
40 1.
80 0.
30 0.
55 0.
95 Ref.
2.
70 3.
10 0~0.
1 Features * Fast Switching Characteristic * Lower Gate Charge D 0 o 10 o 1.
20Ref.
Dimensions in millimeters D 6 D 5 S 4 * Small Footprint & Low Profile Package 2605 Date Code G S 1 D 2 D 3 G Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -4.
0 -3.
3 -20 2.
0 0.
016 Unit V V A A A W W/ C o o 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 62.
5 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 4 www.
DataSheet4U.
com SST2605 -4.
0A, -30V,RDS(ON) 80m£[ P-Channel Enhancement Mode Power Mos.
FET Elektronische Bauelemente Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
-30 _ Typ.
_ Max.
_ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C ,ID=-1mA VDS=VGS, ID=-250uA VGS=± 20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-4.
0A VGS=-4.
5V, I...


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