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SSG4410

SeCoS Halbleitertechnologie GmbH
Part Number SSG4410
Manufacturer SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Published Dec 28, 2009
Detailed Description SSG4410 10A, 30V,RDS(ON) 13.5m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Prod...
Datasheet PDF File SSG4410 PDF File

SSG4410
SSG4410

Overview
SSG4410 10A, 30V,RDS(ON) 13.
5m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product SOP-8 Description The SSG4410 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.
35 0.
49 1.
27Typ.
4.
80 5.
00 0.
100.
25 3.
80 4.
00 6.
20 5.
80 0.
25 0.
40 0.
90 0.
19 0.
25 45 o 0.
375 REF Features * Dynamic dv/dt Rating * Simple drive requirement D 8 D 7 D 6 D 5 0 o 8 o 1.
35 1.
75 Dimensions in millimeters D * Repetitive avalanche rated * Fast switching 4410SC Date Code G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.
DataSheet4U.
com Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ±20 10 8 50 2.
5 0.
02 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient Max.
Symbol Rthj-a Ratings 50 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 5 SSG4410 Elektronische Bauelemente 10A, 30V,RDS(ON) 13.
5m£[ N-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance 2 o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
30 _ Typ.
_ Max.
_ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25oC,ID=1mA VDS=VGS, I...


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