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SSG4435

SeCoS Halbleitertechnologie GmbH
Part Number SSG4435
Manufacturer SeCoS Halbleitertechnologie GmbH
Description P-Channel MOSFET
Published Dec 28, 2009
Detailed Description Elektronische Bauelemente SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Produ...
Datasheet PDF File SSG4435 PDF File

SSG4435
SSG4435

Overview
Elektronische Bauelemente SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES  Low on-resistance  Simple Drive Requirement  Fast switching MARKING 4435SC    = Date Code SOP-8 B LD M A H G C N JK FE REF.
A B C D E F G Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
40 0.
90 0.
19 0.
25 1.
27 TYP.
REF.
H J K L M N Millimeter Min.
Max.
0.
35 0.
49 0.
375 REF.
45° 1.
35 1.
75 0.
10 0.
25 0.
25 REF.
PACKAGE INFORMATION Package MPQ SOP-8 3K LeaderSize 13’ inch S D S D S D G D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS Ratings -30 Gate-Source Voltage VGS ±20 Continuous Drain Current 3 Pulsed Drain Current 1.
2 TA = 25°C ID -8 TA = 70°C -6 IDM -50 Power Dissipation Maximum Junction to Ambient 3 PD 2.
5 RθJA 50 Linear Derating Factor 0.
02 Operating Junction & Storage Temperature Range TJ, TSTG -55~150 Unit V V A A W °C / W W / °C °C http://www.
SeCoSGmbH.
com/ 01-Mar-2011 Rev.
B Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Test condition Static Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250μA Breakdown Voltage Temp.
Coefficient △BVDS/△Tj - -0.
037 - V / °C Reference to 25°C, ID= -1mA Gate-Threshold Voltage VGS(th) -1 - -3 V VDS=VGS, ID= -250μA Forward Transfer C...


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