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SSG4424

SeCoS Halbleitertechnologie GmbH
Part Number SSG4424
Manufacturer SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Published Dec 28, 2009
Detailed Description SSG4424 13.8A, 30V,RDS(ON) 9m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Produ...
Datasheet PDF File SSG4424 PDF File

SSG4424
SSG4424

Overview
SSG4424 13.
8A, 30V,RDS(ON) 9m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product SOP-8 Description 0.
40 0.
90 0.
19 0.
25 45 o ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.
35 0.
49 1.
27 Typ.
0.
375 REF 6.
20 5.
80 0.
25 3.
80 4.
00 4.
80 5.
00 0.
10 0.
25 Features * Low on-resistance * Simple drive requirement D 8 D 7 D 6 D 5 0 o 8 o 1.
35 1.
75 Dimensions in millimeters D * Fast switching Characteristic Date Code 4424SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.
DataSheet4U.
com Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ±20 13.
8 11 50 2.
5 0.
02 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 50 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 4 SSG4424 Elektronische Bauelemente 13.
8A, 30V,RDS(ON) 9m£[ N-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance2 2 Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
30 _ Typ.
_ Max.
_ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25 oC,ID=1mA VDS=VGS, ID=250uA VGS=± 20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=13A VGS=4.
5V, ID=10A 0.
02 _ _ _ _ 1.
0 _ _ _...


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