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SSG4510

SeCoS Halbleitertechnologie
Part Number SSG4510
Manufacturer SeCoS Halbleitertechnologie
Description N & P-Ch Enhancement Mode Power MOSFET
Published Aug 12, 2014
Detailed Description SSG4510 Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V, RDS(ON) 112 mΩ P-Ch: -2.5A,...
Datasheet PDF File SSG4510 PDF File

SSG4510
SSG4510

Overview
SSG4510 Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.
5 A, 100 V, RDS(ON) 112 mΩ P-Ch: -2.
5A, -100 V, RDS(ON) 180 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4510 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SOP-8 B L D M FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Performance A C N J K H G F E MARKING 4510SS = Date Code REF.
A B C D E F G Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
40 0.
90 0.
19 0.
25 1.
27 TYP.
REF.
H J K L M N Millimeter Min.
Max.
0.
35 0.
49 0.
375 REF.
45° 1.
35 1.
75 0.
10 0.
25 0.
25 REF.
PACKAGE INFORMATION Package SOP-8 MPQ 2.
5K Leader Size 13 inch S G D D D D S G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS TA=25°C TA=70°C ID IDM TA=25°C PD TJ, TSTG Ratings N-Ch P-Ch Unit V V A A A W °C 100 ±20 2.
5 2 10 2 -55~150 -100 ±20 -2.
5 -2 -10 Total Power Dissipation Operating Junction and Storage Temperature Range Thermal Data Thermal Resistance Junction-ambient 3 RθJA 62.
5 °C / W http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
18-Jun-2012 Rev.
A Page 1 of 7 SSG4510 Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.
5 A, 100 V, RDS(ON) 112 mΩ P-Ch: -2.
5A, -100 V, RDS(ON) 180 mΩ N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current TJ=25°C Drain-Source Leakage Current TJ=55°C Static Drain-Source On-Resistance Total Gate Charge 2 2 Symbol BVDSS VGS(th) gfs IGSS IDSS M...


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