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SSG4565

SeCoS Halbleitertechnologie GmbH
Part Number SSG4565
Manufacturer SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Published Dec 28, 2009
Detailed Description SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m£[ P Channel 6.5A, 40V,RDS(ON) 33m £[ Enhancement Mode...
Datasheet PDF File SSG4565 PDF File

SSG4565
SSG4565

Overview
SSG4565 Elektronische Bauelemente N Channel 7.
6A, 40V,RDS(ON) 25m£[ P Channel 6.
5A, 40V,RDS(ON) 33m £[ Enhancement Mode Power Mos.
FET RoHS Compliant Product SOP-8 Description 0.
40 0.
90 0.
19 0.
25 The SSG4565 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.
35 0.
49 1.
27Typ.
45 6.
20 5.
80 0.
25 o 0.
375 REF 3.
80 4.
00 4.
80 5.
00 0.
10~0.
25 Features * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.
35 1.
75 Dimensions in millimeters * Fast Switching Performance Date Code D2 4565SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.
DataSheet4U.
com Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings N-Channel P-Channel 40 ±20 7.
6 6 30 2 0.
016 Unit V V A A A W W/ C o o -40 _ +20 -6.
5 -5.
2 -30 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 62.
5 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 7 SSG4565 Elektronische Bauelemente N Channel 7.
6A, 40V,RDS(ON) 25m £[ P Channel 6.
5A, 40V,RDS(ON) 33m £[ Enhancement Mode Power Mos.
FET o Electrical Characteristics N- Channel (Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 2 Symbol BVDSS BVDS/ Tj VGS(th) I...


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