DatasheetsPDF.com

TPC8025

Toshiba Semiconductor
Part Number TPC8025
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Jan 17, 2010
Detailed Description TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications ...
Datasheet PDF File TPC8025 PDF File

TPC8025
TPC8025

Overview
TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 7.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 26 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 11 44 1.
9 Unit V V V A JEDEC JEITA ― ― 2-6J1B Drain power dissipation W TOSHIBA Weight: 0.
08 g (typ.
) 1.
0 W 31 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)