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TPC8029

Toshiba Semiconductor
Part Number TPC8029
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Jan 17, 2010
Detailed Description TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications ...
Datasheet PDF File TPC8029 PDF File

TPC8029
TPC8029

Overview
TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.
9 mΩ (typ.
) High forward transfer admittance: |Yfs| = 40 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 18 72 1.
9 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation W Weight: 0.
08 g (typ.
) 1.
0 W Circuit Configuration 8 7 6 5 www.
DataSheet4U.
com Avalanche current Repetitive avalanche energy (Note 3) 84 18 0.
053 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-09-29 TPC8029 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) ...


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