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TPC8041

Toshiba Semiconductor
Part Number TPC8041
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Jan 17, 2010
Detailed Description TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications ...
Datasheet PDF File TPC8041 PDF File

TPC8041
TPC8041


Overview
TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 26 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b...



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