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TPC8074

Toshiba
Part Number TPC8074
Manufacturer Toshiba
Description N-Channel MOSFET
Published Nov 11, 2013
Detailed Description TPC8074 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8074 1. Applications • • • Lithium-Ion Secondary Batteries Power Mana...
Datasheet PDF File TPC8074 PDF File

TPC8074
TPC8074

Overview
TPC8074 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8074 1.
Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2.
Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 5.
1 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
2 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 2) (Note 3) (Note 4) Symbol VDSS VGSS ID IDP PD PD EAS IAR Tch Tstg Rating 30 ±20 17 68 1.
9 1.
0 75 17 150 -55 to 150 W W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2010-07-08 Rev.
1.
0 Free Datasheet http://www.
datasheet4u.
com/ TPC8074 5.
Thermal Characteristics Characteristics Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (t = 10 s) (t = 10 s) (Note 2) (Note 3) Symbol Rth(ch-a) Rth(ch-a) Max 65.
7 125 Unit /W /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.
1 Note 3:...


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