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TPCC8093

Part Number	TPCC8093
Manufacturer	Toshiba
Description	Field Effect Transistor
Published	Nov 11, 2013
Detailed Description	TPCC8093 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8093 1. Applications • Lithium-Ion Secondary Batteries 2. Features...
Datasheet	TPCC8093 PDF File

Overview

TPCC8093 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8093 1.
Applications • Lithium-Ion Secondary Batteries 2.
Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.
5 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pul...

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