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TPC8085

Toshiba Semiconductor
Part Number TPC8085
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Aug 30, 2014
Detailed Description TPC8085 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8085 1. Applications • • • Lithium-Ion Secondary Batteries Power Mana...
Datasheet PDF File TPC8085 PDF File

TPC8085
TPC8085

Overview
TPC8085 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8085 1.
Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2.
Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.
8 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
3 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 2) (Note 3) (Note 4) Symbol VDSS VGSS ID IDP PD PD EAS IAR Tch Tstg Rating 30 ±20 18 72 1.
9 1.
0 210 18 150 -55 to 150 W W mJ A  A Unit V Note: Using continuou...


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