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STT3418

SamHop Microelectronics
Part Number STT3418
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description Green Product STT3418 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Tr...
Datasheet PDF File STT3418 PDF File

STT3418
STT3418

Overview
Green Product STT3418 Ver 1.
0 S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 5A R DS(ON) (m Ω) Max 39 @ VGS=10V 63 @ VGS=4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Surface Mount Package.
D D G G D S S STT SERIES SOT-223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 30 ±20 TA=25°C TA=70°C 5 4 20 12 TA=25°C TA=70°C 3 1.
9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice.
Nov,22,2012 1 www.
samhop.
com.
tw STT3418 Ver 1.
0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=2.
5A VGS=4.
5V , ID=2A VDS=10V , ID=2.
5A 1 1.
7 31 47 9 3 39 63 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.
0MHz 351 69 52 VDD=15V ID=1A VGS=10V RGEN= 6 ohm VDS=15V,ID=2.
5A,VGS=10V VDS=15V,ID=2.
5A,VGS=4.
5V VDS=15V,ID=2.
5A, VGS=10V 8 11.
2 16.
5 4.
6 5.
8 3.
2 1 1.
8 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERI...


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