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1SS388

Part Number	1SS388
Manufacturer	Toshiba Semiconductor
Description	Silicon Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm  Small ...
Datasheet	1SS388 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm  Small package  Low forward voltage: VF (3) = 0.
54V (typ.
)  Low reverse current: IR = 5μA (Max.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1A Power dissipation P * 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC ― Operating temperature range Topr −40 to 100 °C JEITA ― Note: Using continuously under heavy loads (e.
...

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