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1SS394

Toshiba Semiconductor
Part Number 1SS394
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application 1SS394 Unit: mm z Small ...
Datasheet PDF File 1SS394 PDF File

1SS394
1SS394

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application 1SS394 Unit: mm z Small package z Low forward voltage: VF (2) = 0.
23V (typ.
) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 mA 1A 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.
g.
the application of high JEITA SC-5...


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